RD70HVF1 Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD70HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
DESCRIPTION
RD70HVF1 is a MOS FET type transistor specifically
designed for VHF/UHF High power amplifiers
applications.
OUTLINE DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
FEATURES
High power and High Gain:
Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
1
3
5.0+/-0.3
18.5+/-0.3
4-C2
2
R1.6+/-0.15
0.1
+0.05
-0.01
4.5+/-0.7
6.2+/-0.7
RoHS COMPLIANT
RD70HVF1-101
is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
PIN
1.DRAIN
2.SOURCE
3.GATE
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
UNIT:mm
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS RATINGS UNIT
VDSS
Drain to source voltage Vgs=0V
30
V
VGSS
Gate to source voltage
Vds=0V
+/-20
V
Pch
Channel dissipation
Tc=25°C
150
W
Pin
Input power
Zg=Zl=50Ω
10(Note2) W
ID
Drain current
-
20
A
Tch
Channel temperature
-
175
°C
Tstg
Storage temperature
-
-40 to +175 °C
Rth j-c Thermal resistance
junction to case
1.0
°C/W
Note 1: Above parameters are guaranteed independently.
Note 2: Over 300MHz use spec is 20W
ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
UNIT
MIN TYP MAX.
IDSS Zerogate voltage drain current VDS=17V, VGS=0V
-
-
300
uA
IGSS Gate to source leak current VGS=10V, VDS=0V
-
-
5
uA
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.3 1.8 2.3
V
Pout Output power
f=175MHz ,VDD=12.5V
70 75
-
W
ηD Drain efficiency
Pin=6W, Idq=2.0A
55 60
-
%
Pout Output power
f=520MHz ,VDD=12.5V
50 55
-
W
ηD Drain efficiency
Pin=10W, Idq=2.0A
50 55
-
%
Load VSWR tolerance
VDD=15.2V,Po=70W(PinControl)
No destroy
-
f=175MHz,Idq=2.0A,Zg=50Ω
LoadVSWR=20:1(All phase)
Load VSWR tolerance
VDD=15.2V,Po=50W(PinControl)
No destroy
-
f=520MHz,Idq=2.0A,Zg=50Ω
Load VSWR=20:1(All phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
RD70HVF1
MITSUBISHI ELECTRIC
1/8
10 Jan 2006