RD70HHF1 Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – Silicon MOSFET Power Transistor 30MHz, 70W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD70HHF1
Silicon MOSFET Power Transistor 30MHz,70W
DESCRIPTION
RD70HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
•High power and High Gain:
Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz
•High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
OUTLINE DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
4-C2
3
5.0+/-0.3
18.5+/-0.3
2
R1.6+/-0.15
0.1
+0.05
-0.01
4.5+/-0.7
6.2+/-0.7
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage Vgs=0V
VGSS
Gate to source voltage
Vds=0V
Pch
Channel dissipation
Tc=25°C
Pin
Input power
ID
Drain current
Zg=Zl=50Ω
-
Tch
Channel Temperature
-
Tstg
Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
50
+/-20
150
5
20
175
-40 to +175
1.0
UNIT
V
V
W
W
A
°C
°C
°C/W
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
ELECTRICAL CHARACTERISTICS (Tc=25deg.C , UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V
-
-
10
IGSS Gate to source leak current VGS=10V, VDS=0V
-
-
1
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.5
-
4.5
Pout Output power
f=30MHz ,VDD=12.5V
70 80
-
ηD Drain efficiency
Pin=3.5W,Idq=1.0A
55 60
-
Load VSWR tolerance
VDD=15.2V,Po=70W(Pin Control)
No destroy
f=30MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD70HHF1
MITSUBISHI ELECTRIC
1/7
REV.5 2 APRIL. 2004