RD60HUF1_06 Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD60HUF1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W
DESCRIPTION
RD60HUF1 is a MOS FET type transistor specifically
designed for UHF High power amplifiers applications.
OUTLINE DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
FEATURES
High power and High Gain:
Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz
High Efficiency: 55%typ.on UHF Band
1
4-C2
2
APPLICATION
For output stage of high power amplifiers in UHF
Band mobile radio sets.
3
5.0+/-0.3
18.5+/-0.3
R1.6+/-0.15
0.1
+0.05
-0.01
4.5+/-0.7
6.2+/-0.7
RoHS COMPLIANT
RD60HUF1-101
is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage Vgs=0V
VGSS
Gate to source voltage
Vds=0V
Pch
Channel dissipation
Tc=25°C
Pin
Input power
Zg=Zl=50Ω
ID
Drain current
-
Tch
Channel temperature
-
Tstg
Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
30
+/-20
150
20
20
175
-40 to +175
1.0
UNIT
V
V
W
W
A
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zerogate voltage drain current VDS=17V, VGS=0V
-
- 400
IGSS Gate to source leak current VGS=10V, VDS=0V
-
-
1
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.1 1.45 1.8
Pout Output power
f=520MHz ,VDD=12.5V
60 65
-
ηD Drain efficiency
Pin=10W, Idq=2.5A
50 55
-
Load VSWR tolerance
VDD=15.2V,Po=60W(PinControl)
No destroy
f=520MHz,Idq=2.5A,Zg=50Ω
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD60HUF1
MITSUBISHI ELECTRIC
1/7
10 Jan 2006