RD60HUF1 Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – MITSUBISHI RF POWER MOS FET

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD60HUF1
Silicon MOSFET Power Transistor 520MHz,60W
DESCRIPTION
RD60HUF1 is a MOS FET type transistor specifically
designed for UHF High power amplifiers applications.
OUTLINE DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
4-C2
FEATURES
•High power and High Gain:
Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz
•High Efficiency: 55%typ.on UHF Band
APPLICATION
For output stage of high power amplifiers in UHF
Band mobile radio sets.
2
3
5.0+/-0.3
18.0+/-0.3
R1.6+/-0.15
+0.05
0.1 ^-0.01
4.5+/-0.7
6.2+/-0.7
PIN
1.Drain
2.Source
3.Gate
UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS Drain tosource voltage
VGSS Gateto source voltage
Pch
Channel dissipation
Tc=25°C
Tj
Junction Temperature
Tstg
Storage temperature
Rth-c
Thermal resistance
Junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
30
+/-20
150
175
-40 to +175
1.0
UNIT
V
V
W
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zerogate voltage drain current VDS=17V, VGS=0V
-
-
400
IGSS Gate to source leak current VGS=10V, VDS=0V
-
-
1
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.1 1.45 1.8
Pout Output power
f=520MHz ,VDD=12.5V
60 65
-
ηD Drain efficiency
Pin=10W, Idq=2.5A
50 55
-
Load VSWR tolerance
VDD=15.2V,Po=60W(PinControl)
Idq=2.5A,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD60HUF1
MITSUBISHI ELECTRIC
1/7
REV.1 14 May. 2003