RD45HMF1_06 Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor 900MHz,45W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD45HMF1
RoHS Compliance, Silicon MOSFET Power Transistor 900MHz,45W
DESCRIPTION
RD45HMF1 is a MOS FET type transistor specifically
designed for 900MHz-band High power amplifiers
applications.
OUTLINE DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
4-C2
FEATURES
High power and High Gain:
Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz
High Efficiency: 50%typ.
2
APPLICATION
For output stage of high power amplifiers in
800-900MHz Band mobile radio sets.
3
5.0+/-0.3
18.5+/-0.3
R1.6+/-0.15
0.1
+0.05
-0.01
4.5+/-0.7
6.2+/-0.7
RoHS COMPLIANT
RD45HMF1-101
is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage Vgs=0V
VGSS
Gate to source voltage
Vds=0V
Pch
Channel dissipation
Tc=25°C
Pin
Input power
Zg=Zl=50Ω
ID
Drain current
-
Tch
Channel temperature
-
Tstg
Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
30
+/-20
125
25
15
175
-40 to +175
1.2
UNIT
V
V
W
W
A
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zerogate voltage drain current VDS=17V, VGS=0V
-
-
10
IGSS Gate to source leak current VGS=10V, VDS=0V
-
-
1
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.0
-
3.0
Pout Output power
f=900MHz ,VDD=12.5V
45 50
-
ηD Drain efficiency
Pin=15W,Idq=2.0A
45 50
-
Load VSWR tolerance
VDD=15.2V,Po=45W(PinControl)
No destroy
Idq=2.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD45HMF1
MITSUBISHI ELECTRIC
1/7
10 Jan 2006