RD35HUF2 Datasheet, PDF (1/20 Pages) Mitsubishi Electric Semiconductor – Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W

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RD35HUF2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W
OUTLINE
DESCRIPTION
DRAWING
RD35HUF2 is MOS FET type transistor specifically
0.10
designed for VHF/UHF RF power amplifiers applications.
24.60
18.00
a'
1
2
3
RD35HUF2
Lot No.-G
○
FEATURES
1. Supply with Tape and Reel. 500 Units per Reel.
2. Employing Mold Package
3. High Power and High Efficiency
Pout=43Wtyp, Drain Effi.=60%typ
@ Vds=12.5V Idq=0.5A Pin=3.0W f=530MHz
Pout=45Wtyp, Drain Effi.=72%typ
@ Vds=12.5V Idq=1.0A Pin=3.0W f=175MHz
4. Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in VHF/UHF
band mobile radio sets.
5
6
7
a
3.15
3.63
Pin 1. SOURCE (COMMON)
2. OPEN
3. DRAIN
4. SOURCE (COMMON)
5. SOURCE (COMMON)
6. OPEN
7. GATE
8. SOURCE (COMMON)
2.40
4
3
2
RD3 5HU F2
13.40
○ Lot No.-G
8
7
6
4
8
0.10
1
5
Unit: mm
RoHS COMPLIANT
RD35HUF2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders. (i.e. tin-lead solders alloys containing more than 85% lead.)
Publication Date : May 2011
1