RD30HUF1_11 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W

< Silicon RF Power MOS FET (Discrete) >
RD30HUF1
RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W
DESCRIPTION
RD30HUF1 is a MOS FET type transistor specifically
designed for UHF RF power amplifiers applications.
FEATURES
High power gain:
Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz
High Efficiency: 55%typ.
OUTLINE DRAWING
7.2+/-0.5
22.0+/-0.3
18.0+/-0.3
7.6+/-0.3
1
2
3
2.8+/-0.3
APPLICATION
For output stage of high power amplifiers in UHF
band mobile radio sets.
4-C1
R1.6
PIN
1.Drain
2.Source
3.Gate
UNIT:mm
RoHS COMPLIANT
RD30HUF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage
Vgs=0V
VGSS Gate to source voltage
Vds=0V
Pch
Channel dissipation
Tc=25°C
Pin
Input power
Zg=Zl=50
ID
Drain current
-
Tch
Channel temperature
-
Tstg
Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
Publication Date : Oct．2011
1
RATINGS
30
+/-20
75
7.5
7
175
-40 to +175
2.0
UNIT
V
V
W
W
A
°C
°C
°C/W