RD20HMF1_11 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W

< Silicon RF Power MOS FET (Discrete) >
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
DESCRIPTION
RD20HMF1 is a MOS FET type transistor specifically
designed for 900MHz-band RF power amplifiers
applications.
FEATURES
High power gain:
Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz
High Efficiency: 55%typ.
APPLICATION
For output stage of high power amplifiers in 900MHz band
Mobile radio sets.
OUTLINE DRAWING
22.0+/-0.3
18.0+/-0.3
7.2+/-0.5 7.6+/-0.3
4-C1
1
2
3
2.8+/-0.3
R1.6
PIN
1.Drain
2.Source
3.Gate
UNIT:mm
RoHS COMPLIANT
RD20HMF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage
Vgs=0V
VGSS Gate to source voltage
Vds=0V
Pch
Channel dissipation
Tc=25°C
Pin
Input power
Zg=Zl=50
ID
Drain current
-
Tch
Channel temperature
-
Tstg
Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
30
+/-20
71.4
6
6
175
-40 to +175
2.1
UNIT
V
V
W
W
A
°C
°C
°C/W
Publication Date : Oct．2011
1