RD20HMF1 Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – Silicon MOSFET Power Transistor,900MHz,20W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
DESCRIPTION
RD20HMF1 is a MOS FET type transistor specifically
designed for 900MHz-band RF power amplifiers
applications.
OUTLINE DRAWING
22.0+/-0.3
18.0+/-0.3
7.2+/-0.5 7.6+/-0.3
FEATURES
High power gain:
Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz
High Efficiency: 55%typ.
1
2
3
APPLICATION
For output stage of high power amplifiers in 900MHz band
Mobile radio sets.
2.8+/-0.3
RoHS COMPLIANT
RD20HMF1-101
is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
4-C1
R1.6
PIN
1.Drain
2.Source
3.Gate
UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage Vgs=0V
VGSS
Gate to source voltage
Vds=0V
Pch
Channel dissipation
Tc=25°C
Pin
Input power
Zg=Zl=50Ω
ID
Drain current
-
Tch
Channel temperature
-
Tstg
Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
30
+/-20
71.4
6
6
175
-40 to +175
2.1
UNIT
V
V
W
W
A
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V
-
-
5
IGSS Gate to source leak current
VGS=10V, VDS=0V
-
-
1
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.0 -
3.0
Pout Output power
f=900MHz ,VDD=12.5V
20 25
-
ηD Drain efficiency
Pin=3.0W, Idq=1.0A
50 55
-
Load VSWR tolerance
VDD=15.2V,Po=20W(PinControl)
No destroy
Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD20HMF1
MITSUBISHI ELECTRIC
1/7
10 Jan 2006