RD16HHF1_11 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W

< Silicon RF Power MOS FET (Discrete) >
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
DESCRIPTION
RD16HHF1 is a MOS FET type transistor specifically
designed for HF RF power amplifiers applications.
FEATURES
High power gain:
Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz
OUTLINE DRAWING
9.1+/-0.7
3.6+/-0.2
2
1.2+/-0.4
0.8+0.10/-0.15
1.3+/-0.4
APPLICATION
For output stage of high power amplifiers in
HF band mobile radio sets.
123
2.5 2.5
5deg
0.5+0.10/-0.15
RoHS COMPLIANT
RD16HHF1-101 is a RoHS compliant products.
PINS
1:GAT E
9.5MAX
2:SOURCE
3:DRAIN
note:
Torelance of no designation means typical value.
Dimension in mm.
RoHS compliance is indicate by the letter “G” after the lot
marking.
This product include the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct．2011
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