RD16HHF1 Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – Silicon MOSFET Power Transistor 30MHz,16W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
DESCRIPTION
RD16HHF1 is a MOS FET type transistor specifically
designed for HF RF power amplifiers applications.
OUTLINE DRAWING
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FEATURES
High power gain:
Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz
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4
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note(3)
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APPLICATION
For output stage of high power amplifiers in
HF band mobile radio sets.
RoHS COMPLIANT
1 23
 
EFH
."9
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PINS
1:GATE
2:SOURCE
3:DRAIN
4:FIN(SOURCE)
note:
(1)Torelance of no designation means typical value.
Dimension in mm.
(2)
:Dipping area
RD16HHF1-101 is a RoHS compliant products.
(3)
:Copper of the ground work is exposed in case of frame separation.
RoHS compliance is indicate by the letter “G” after the lot
marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD16HHF1
MITSUBISHI ELECTRIC
1/8
10 Jan 2006