RD15HVF1_08 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – RF POWER MOS FET Silicon MOSFET Power Transistor, 175MHz520MHz,15W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
DESCRIPTION
RD15HVF1 is a MOS FET type transistor specifically
designed for VHF/UHF High power amplifiers applica
-tions.
FEATURES
High power and High Gain:
Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz
Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz
High Efficiency: 60%typ. on VHF Band
High Efficiency: 55%typ. on UHF Band
OUTLINE DRAWING
9.1+/-0.7
3.6+/-0.2
2
1.2+/-0.4
0.8+0.10/-0.15
1.3+/-0.4
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
123
2.5 2.5
5deg
0.5+0.10/-0.15
RoHS COMPLIANT
RD15HVF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the lot
marking.


PINS
1:GATE
9.5MAX
2:SOURCE
note:
3:DRAIN
Torelance of no designation means typical value.
Dimension in mm.


This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD15HVF1
MITSUBISHI ELECTRIC
1/9
7 Mar 2008