RD12MVS1_11 Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W

< Silicon RF Power MOS FET (Discrete) >
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
DESCRIPTION
RD12MVS1 is a MOS FET type transistor
specifically designed for VHF RF power
amplifiers applications.
OUTLINE DRAWING
6.0+/-0.15
FEATURES
High Power Gain:
Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
High Efficiency: 57%typ. (175MHz)
INDEX MARK
(Gate)
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
3
(0.25)
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RoHS COMPLIANT
RD12MVS1-101,T112 is a RoHS compliant products.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to Source Voltage
VGS=0V
VGSS Gate to Source Voltage
VDS=0V
ID
Drain Current
Pin
Input Power
Zg=Zl=50
Pch
Channel Dissipation
Tc=25°C
Tj
Junction Temperature
Tstg
Storage Temperature
Rthj-c Thermal Resistance
Junction to Case
Note: Above parameters are guaranteed independently.
RATINGS
50
+/- 20
4
2
50
150
-40 to +125
2.5
UNIT
V
V
A
W
W
°C
°C
°C/W
Publication Date : Oct．2011
1