RD12MVS1 Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
DESCRIPTION
OUTLINE DRAWING
RD12MVS1 is a MOS FET type transistor























^{4.
6+/-
0.0
5}









specifically designed for VHF RF power
























^3.3
+/-
0.05










amplifiers applications.
6.0+/-0.15
0.2+/-0.05
0.8+/-0.05
1
FEATURES
2
High Power Gain:
Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
High Efficiency: 57%typ. (175MHz)
3
(0.25)
(0.25)
INDEX MARK
APPLICATION
(Gate)
Terminal No.
For output stage of high power amplifiers in



















^{12
..DSor
auirnc}
_e(o(u
GtpN
^uDt))










VHF band mobile radio sets.
3.Gate (input)
RoHS COMPLIANT
Note
( ):center value
UNIT:mm
RD12MVS1-101,T112
is a RoHS compliant
products.
RoHS compliance is indicate by the letter “G” after the Lot Marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to Source Voltage VGS=0V
VGSS
Gate to Source Voltage VDS=0V
ID
Drain Current
Pin
Input Power
Zg=Zl=50Ω
Pch
Channel Dissipation
Tc=25°C
Tj
Junction Temperature
Tstg
Storage Temperature
Rthj-c Thermal Resistance
Junction to Case
Note: Above parameters are guaranteed independently.
RATINGS
50
+/- 20
4
2
50
150
-40 to +125
2.5
UNIT
V
V
A
W
W
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN. TYP. MAX.
IDSS Zero Gate Voltage Drain Current VDS=17V, VGS=0V
-
-
10
IGSS Gate to Source Leak Current VGS=10V, VDS=0V
-
-
1
VTH Gate Threshold Voltage
VDS=12V, IDS=1mA
1.8
-
4.4
Pout Output Power
f=175MHz,VDD=7.2V
11.5 12
-
ηD Drain Efficiency
Pin=1.0W,Idq=1.0A
55 57
-
VDD=9.2V,Po=12W(Pin Control)
Load VSWR tolerance
f=175MHz,Idq=1.0A,Zg=50Ω
Not destroy
Load VSWR=20:1(All Phase)
UNIT
uA
uA
V
W
%
-
Note: Above parameters, ratings, limits and conditions are subject to change.
RD12MVS1
MITSUBISHI ELECTRIC
1/7
10 Jan 2006