RD12MVP1_11 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W

< Silicon RF Power MOS FET (Discrete) >
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
DESCRIPTION
RD12MVP1 is a MOS FET type transistor
specifically designed for VHF RF power
amplifiers applications.
OUTLINE DRAWING
8.0+/-0.2
(d)
(b)
0.2+/-0.05
7.0+/-0.2
(a)
(b)
FEATURES
•High Power Gain
Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
•High Efficiency: 55%min. (175MHz)
•No gate protection diode
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
INDEX MARK
[Gate]
(4.5)
0.95+/-0.2
2.6+/-0.2
TOP VIEW SIDE VIEW
DETAIL A
SIDE VIEW
DETAIL A
(c)
BOTTOM VIEW
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
UNIT:mm
NOTES:
1. ( ) Typical value
RoHS COMPLIANT
RD12MVP1 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
RATINGS
VDSS
Drain to Source Voltage
VGS=0V
50
VGSS Gate to Source Voltage
VDS=0V
-5 to +20
ID
Drain Current
4.0
Pin
Input Power
Zg=Zl=50
1.0
Pch
Channel Dissipation
Tc=25°C
125
Tj
Junction Temperature
+150
Tstg
Storage Temperature
-40 to +125
Rthj-c Thermal Resistance
Junction to Case
1.5
Note: Above parameters are guaranteed independently.
UNIT
V
V
A
W
W
°C
°C
°C/W
Publication Date : Oct．2011
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