RD12MVP1 Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – Silicon MOSFET Power Transistor, 175MHz, 10W

MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
ç
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
DESCRIPTION
OUTLINE DRAWINGç
(b)
0.2+/-0.05
7.0+/-0.2
(a)
(b)
RD12MVP1 is a MOS FET type transistor ç ç ç ç ç ç ç ç ç ç ç ç ç ^8.0+/-0.2 ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç
specifically designed for VHF RF power ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç
amplifiers applications.
(d)
FEATURES
•High Power Gain
(4.5)
0.95+/-0.2
2.6+/-0.2
Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
•High Efficiency: 55%min. (175MHz)
INDEX MARK
[Gate]
TOP VIEW SIDE VIEW
(c)
BOTTOM VIEW
•No gate protection diode
DETAIL A
APPLICATION
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
For output stage of high power amplifiers in ç ç ç ç ç ç ç ç ç^Sç^IDç^{E V}ç^IEç^Wç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç
VHF band mobile radio sets.
UNIT:mm
NOTES:
DETAIL A
1. ( ) Typical value
RoHS COMPLIANT
RD12MVP1 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high
melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to Source Voltage VGS=0V
VGSS
Gate to Source Voltage VDS=0V
ID
Drain Current
Pin
Input Power
Zg=Zl=50Ω
Pch
Channel Dissipation
Tc=25°C
Tj
Junction Temperature
Tstg
Storage Temperature
Rthj-c Thermal Resistance
Junction to Case
Note: Above parameters are guaranteed independently.
RATINGS
60
-5 to +20
4.0
1.0
125
+150
-40 to +125
1.5
UNIT
V
V
A
W
W
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN. TYP. MAX.
IDSS Zero Gate Voltage Drain Current VDS=17V, VGS=0V
-
-
10
IGSS Gate to Source Leak Current VGS=10V, VDS=0V
-
-
1.0
VTH Gate Threshold Voltage
VDS=12V, IDS=1mA
1.8
-
4.4
Pout Output Power
f=175MHz,VDD=7.2V
10
12
-
ηD Drain Efficiency
Pin=0.5W,Idq=1.0A
55
57
-
VDD=9.5V,Po=10W(Pin Control)
VSWRT Load VSWR tolerance
f=175MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy
Note: Above parameters, ratings, limits and conditions are subject to change.çç
UNIT
uA
uA
V
W
%
-
RD12MVP1
MITSUBISHI ELECTRIC
1/7
1st Jun. 2006