RD100HHF1_10 Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – Silicon MOSFET Power Transistor 30MHz,100W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RD100HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W
DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
High power and High Gain:
Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
OUTLINE DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
4-C2
3
5.0+/-0.3
18.5+/-0.3
2
R1.6+/-0.15
0.1
+0.05
-0.01
4.5+/-0.7
6.2+/-0.7
RoHS COMPLIANT
RD100HHF1-101
is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage Vgs=0V
VGSS
Gate to source voltage
Vds=0V
Pch
Channel dissipation
Tc=25°C
Pin
Input power
Zg=Zl=50Ω
ID
Drain current
-
Tch
Channel temperature
-
Tstg
Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
RATINGS
50
+/-20
176.5
12.5
25
175
-40 to +175
0.85
UNIT
V
V
W
W
A
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zerogate voltage drain current VDS=17V, VGS=0V
-
-
10
IGSS Gate to source leak current VGS=10V, VDS=0V
-
-
1
VTH Gate threshold voltage
VDS=12V, IDS=1mA
1.5
-
4.5
Pout Output power
f=30MHz ,VDD=12.5V
100 110 -
ηD Drain efficiency
Pin=7W, Idq=1.0A
55 60
-
Load VSWR tolerance
VDD=15.2V,Po=100W(Pin
No destroy
Control)
f=30MHz,Idq=1.0A,Zg=50Ω
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD100HHF1
1/8
17 Aug 2010