RD09MUP2_11 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W

< Silicon RF Power MOS FET (Discrete) >
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
DESCRIPTION
RD09MUP2 is a MOS FET type transistor
specifically designed for UHF RF power
amplifiers applications.
8.0+/-0.2
(d)
(b)
0.2+/-0.05
7.0+/-0.2
(a)
(b)
FEATURES
•High power gain:
Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
•High Efficiency: 50%min. (520MHz)
•Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in
UHF band mobile radio sets.
INDEX MARK
[Gate]
(4.5)
0.95+/-0.2
2.6+/-0.2
TOP VIEW SIDE VIEW
DETAIL A
SIDE VIEW
DETAIL A
(c)
BOTTOM VIEW
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
UNIT:mm
NOTES:
1. ( ) Typical value
RoHS COMPLIANT
RD09MUP2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS RATINGS UNIT
D
VDSS Drain to source voltage Vgs=0V
40
V
VGSS
ID
Gate to source voltage Vds=0V
Drain Current
-
-5 to +10 V
G
4.0
A
Pin
Input Power
Zg=Zl=50
Pch
Channel dissipation
Tc=25°C
Tj
Junction Temperature
-
1.6
W
83
W
150
°C
S
SCHEMATIC DRAWING
Tstg
Storage temperature
-
-40 to +125 °C
Rth j-c Thermal resistance
Junction to case
1.5
°C/W
Note: Above parameters are guaranteed independently.
Publication Date : Oct．2011
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