RD09MUP2_10 Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS


Silicon RF Power Semiconductors
RD09MUP2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W
DESCRIPTION
RD09MUP2 is a MOS FET type transistor
specifically designed for UHF RF power
amplifiers applications.
8.0+/-0.2
(d)
(b)
0.2+/-0.05
7.0+/-0.2
(a)
(b)
FEATURES
•High power gain:
(4.5)
0.95+/-0.2
2.6+/-0.2
Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
•High Efficiency: 50%min. (520MHz)
•Integrated gate protection diode
INDEX MARK
[Gate]
TOP VIEW SIDE VIEW
DETAIL A
(c)
BOTTOM VIEW
APPLICATION
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
For output stage of high power amplifiers in
UHF band mobile radio sets.
RoHS COMPLIANT
SIDE VIEW
DETAIL A
UNIT:mm
NOTES:
1. ( ) Typical value
RD09MUP2 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high
melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
VDSS Drain to source voltage
VGSS Gate to source voltage
CONDITIONS
Vgs=0V
Vds=0V
ID
Pin
Pch
Tj
Tstg
Rth j-c
Drain Current
Input Power
Channel dissipation
Junction Temperature
Storage temperature
Thermal resistance
-
Zg=Zl=50Ω
Tc=25°C
-
-
Junction to case
Note: Above parameters are guaranteed independently.
RATINGS
40
-5 to +10
4.0
1.6
83
150
-40 to +125
1.5
UNIT
V
V
A
W
W
°C
°C
°C/W
%
(
4
SCHEMATIC DRAWING
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V
-
-
10
IGSS Gate to source leak current
VGS=10V, VDS=0V
-
-
1
VTH Gate threshold Voltage
VDS=12V, IDS=1mA
0.5
-
2.5
Pout Output power
f=520MHz , VDD=7.2V
8
9
-
ηD Drain efficiency
Pin=0.8W,Idq=1.0A
50
-
-
VDD=9.5V,Po=8W(Pin Control)
VSWRT Load VSWR tolerance
f=520MHz,Idq=1.0A,Zg=50Ω
No destroy
Load VSWR=20:1(All Phase)
Note: Above parameters, ratings, limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
-
RD09MUP2
17 Aug 2010
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