RD07MVS2_10 Datasheet, PDF (1/10 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RD07MVS2
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
DESCRIPTION
RD07MVS2 is a MOS FET type transistor
specifically designed for VHF/UHF RF power
amplifiers applications.
This device has an internal monolithic zener
diode from gate to source for ESD protection.
OUTLINE DRAWING
6.0+/-0.15
FEATURES
High power gain:
Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz
High Efficiency: 60%typ. (175MHz)
High Efficiency: 55%typ. (520MHz)
Integrated gate protection diode
INDEX MARK
(Gate)
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
3
(0.25)
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RoHS COMPLIANT
RD07MVS2-101,T112
is a RoHS compliant products. RoHS compliance is indicating by the letter “G” after the
Lot Marking. This product includes the lead in high melting temperature type solders.
How ever, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
RD07MVS2
1/10
17 Aug 2010