RD07MVS2 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – Silicon MOSFET Power Transistor,175MHz,520MHz,7W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD07MVS2
RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W
DESCRIPTION
RD07MVS2 is a MOS FET type transistor
OUTLINE DRAWING
specifically designed for VHF/UHF RF po
-wer amplifiers applications.
This device have an interal monolithic zener
6.0+/-0.15
diode from gate to source for ESD protection.
FEATURES
•High power gain:
Pout>7W, Gp>10dB
@Vdd=7.2V,f=520MHz
•High Efficiency: 60%typ. (175MHz)
•High Efficiency: 55%typ. (520MHz)
•Integrated gate protection diode
INDEX MARK
(Gate)
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
3
(0.25)
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RoHS COMPLIANT
RD07MVS2-101,T112
is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the Lot Marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD07MVS2
MITSUBISHI ELECTRIC
1/9
17 Jan. 2006