RD07MVS1_11 Datasheet, PDF (1/10 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

< Silicon RF Power MOS FET (Discrete) >
RD07MVS1
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
DESCRIPTION
RD07MVS1 is a MOS FET type transistor
specifically designed for VHF/UHF RF power
amplifiers applications.
OUTLINE DRAWING
6.0+/-0.15
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
FEATURES
High power gain:
Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz
High Efficiency: 60%typ. (175MHz)
High Efficiency: 55%typ. (520MHz)
APPLICATION
For output stage of high power amplifiers in
VHF/UHF band mobile radio sets.
INDEX MARK
(Gate)
3
(0.25)
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RoHS COMPLIANT
RD07MVS1-101, T112 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct．2011
1