RD07MVS1B_11 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

< Silicon RF Power MOS FET (Discrete) >
RD07MVS1B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
DESCRIPTION
OUTLINE DRAWING
RD07MVS1B is a MOS FET type transistor
specifically designed for VHF/UHF RF power
6.0+/-0.15
amplifiers applications.
RD07MVS1B improved a drain surge than
RD07MVS1 by optimizing MOSFET structure.
FEATURES
High power gain:
Pout>7W, Gp>10dB
@Vdd=7.2V,f=520MHz
High Efficiency: 60%typ. (175MHz)
High Efficiency: 55%typ. (520MHz)
INDEX MARK
(Gate)
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
3
(0.25)
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
APPLICATION
For output stage of high power amplifiers in
VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD07MVS1B-101, T112 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct．2011
1