RD07MVS1B_10 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RD07MVS1B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
DESCRIPTION
RD07MVS1B is a MOS FET type transistor ^{OUTLINE DRAWING}
specifically designed for VHF/UHF RF power
amplifiers applications.
RD07MVS1B improved a drain surge than
6.0+/-0.15
RD07MVS1 by optimizing MOSFET structure.
FEATURES
High power gain:
Pout>7W, Gp>10dB
@Vdd=7.2V,f=520MHz
High Efficiency: 60%typ. (175MHz)
High Efficiency: 55%typ. (520MHz)
APPLICATION
For output stage of high power amplifiers in
VHF/UHF band mobile radio sets.
INDEX MARK
(Gate)
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
2
3
(0.25)
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RoHS COMPLIANT
RD07MVS1B-101, T112 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD07MVS1B
17 Aug 2010
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