RD07MUS2B_10 Datasheet, PDF (1/17 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W
DESCRIPTION
RD07MUS2B is a MOS FET type transistor
specifically designed for VHF/UHF/870MHz
RF power amplifiers applications.
OUTLINE DRAWING
6.0+/-0.15
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
FEATURES
High power gain and High Efficiency.
Typical
Po
Gp ηD
(175MHz) 7.2W 13.8dB 65%
(527MHz) 8W 13.0dB 63%
(870MHz) 7W 11.5dB 58%
Integrated gate protection diode.
APPLICATION
For output stage of high power amplifiers in
VHF/UHF/800MHz-band mobile radio sets.
INDEX MARK
(Gate)
1
2
3
(0 .2 5 )
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:m m
(0 .2 5 )
RoHS COMPLIANT
RD07MUS2B is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot
Marking. This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
RATINGS UNIT
VDSS Drain to source voltage Vgs=0V
25
V
VGSS Gate to source voltage Vds=0V
-5/+10
V
Pch
Channel dissipation
Tc=25°C
50
W
Pin
Input Power
Zg=Zl=50
0.8*
W
ID
Drain Current
-
3
A
Tch
Junction Temperature
-
150
°C
Tstg
Storage temperature
-
-40 to +125 °C
Rth j-c Thermal resistance
Junction to case
2.5
°C/W
Note: Above parameters are guaranteed independently.
*: 175MHz spec. is 0.6W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
UNIT
MIN TYP MAX.
IDSS Drain cutoff current
VDS=17V, VGS=0V
-
-
10
uA
IGSS Gate cutoff current
VGS=5V, VDS=0V
-
-
1
uA
VTH Gate threshold Voltage
VDS=7.2V, IDS=1mA
0.5 1
1.5
V
Pout1 Output power
f=175MHz,VDD=7.2V
- 7.2*
-
W
D1 Drain efficiency
Pin=0.3W,Idq=250mA
- 65*
-
%
Pout2 Output power
f=527MHz ,VDD=7.2V
7** 8**
-
W
D2 Drain efficiency
Pin=0.4W,Idq=250mA
58** 63**
-
%
Pout3 Output power
f=870MHz ,VDD=7.2V
- 7***
-
W
D3 Drain efficiency
Pin=0.5W,Idq=250mA
- 58*** -
%
VDD=9.5V,Po=7W(Pin Control)
VSWRT Load VSWR tolerance
f=527MHz,Idq=250mA,Zg=50
No destroy
-
Load VSWR=20:1(All Phase)
Note: Above parameters, ratings, limits and conditions are subject to change.
* At 135-175MHz broad matching
** At 450-527MHz broad matching *** At 763-870MHz broad matching
RD07MUS2B
1/17
23 Dec 2010