RD07MUS2B Datasheet, PDF (1/14 Pages) Mitsubishi Electric Semiconductor – RF POWER MOS FET Silicon MOSFET Power Transistor,175MHz,527MHz,7W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
DESCRIPTION
RD07MUS2B is a MOS FET type transistor
specifically designed for VHF/UHF RF power
amplifiers applications.
OUTLINE DRAWING
6.0+/-0.15
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
FEATURES
High power gain and High Efficiency.
Gp>13.2dB 58%min. (175MHz)
Gp> 12.4dB 58%min. (527MHz)
Gp> 11.5dB 58%Typ. (870MHz)
Integrated gate protection diode.
APPLICATION
For output stage of high power amplifiers in
VHF/UHF-band mobile radio sets.
The recommended frequency is 135-527MHz.
INDEX MARK
(Gate)
1
2
3
(0.25)
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
RoHS COMPLIANT
Note
( ):center value
RD07MUS2B is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot
Marking. This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V
25
V
VGSS Gate to source voltage Vds=0V
-5/+10
V
Pch
Channel dissipation
Tc=25°C
50
W
Pin
Input Power
Zg=Zl=50Ω
0.8*
W
ID
Drain Current
-
3
A
Tch
Junction Temperature
-
150
°C
Tstg
Storage temperature
-
-40 to +125 °C
Rth j-c Thermal resistance
Junction to case
2.5
°C/W
Note: Above parameters are guaranteed independently.
*: 175MHz spec. is 0.6W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Drain cutoff current
VDS=17V, VGS=0V
-
-
10
IGSS
VTH
Pout1
ηD1
Gate cutoff current
Gate threshold Voltage
Output power
Drain efficiency
VGS=5V, VDS=0V
VDS=7.2V, IDS=1mA
f=175MHz,VDD=7.2V
Pin=0.3W,Idq=250mA
-
-
1
-
1
-
6.3** 7.2** -
58** 65**
-
Pout2 Output power
ηD2 Drain efficiency
f=527MHz ,VDD=7.2V
Pin=0.4W,Idq=250mA
7*** 8***
-
58*** 63*** -
VSWRT1 Load VSWR tolerance1
VDD=9.5V,Po=6.3W(Pin Control)
f=175MHz,Idq=250mA,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy
VSWRT2 Load VSWR tolerance2
VDD=9.5V,Po=7W(Pin Control)
f=527MHz,Idq=250mA,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy
Note: Above parameters, ratings, limits and conditions are subject to change.
** At 135-175MHz broad matching
*** At 450-527MHz broad matching
UNIT
uA
uA
V
W
%
W
%
-
-
RD07MUS2B
MITSUBISHI ELECTRIC
1/14
9 Sep 2009