RD06HVF1_11 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W

< Silicon RF Power MOS FET (Discrete) >
RD06HVF1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
DESCRIPTION
RD06HVF1 is a MOS FET type transistor specifically
designed for VHF RF power amplifiers applications.
FEATURES
High power gain:
Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
OUTLINE DRAWING
9.1+/-0.7
3.6+/-0.2
2
1.2+/-0.4
0.8+0.10/-0.15
1.3+/-0.4
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
123
2.5 2.5
5deg
0.5+0.10/-0.15
RoHS COMPLIANT
RD06HVF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the lot
PINS
1:GAT E
9.5MAX
2:SOURCE
3:DRAIN
note:
Torelance of no designation means typical value.
Dimension in mm.
marking.
This product include the lead in high melting temperature type solders.
However,it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct．2011
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