RD06HHF1_11 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W

< Silicon RF Power MOS FET (Discrete) >
RD06HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W
DESCRIPTION
RD06HHF1 is a MOS FET type transistor specifically
designed for HF RF power amplifiers applications.
OUTLINE DRAWING
9.1+/-0.7
1.3+/-0.4
FEATURES
High power gain:
Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
3.6+/-0.2
2
1.2+/-0.4
APPLICATION
0.8+0.10/-0.15
For output stage of high power amplifiers in
HF band mobile radio sets.
123
2.5 2.5
0.5+0.10/-0.15
5deg
RoHS COMPLIANT
RD06HHF1-101 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the lot
PINS
1:GAT E
9.5MAX
2:SOURCE
3:DRAIN
note:
Torelance of no designation means typical value.
Dimension in mm.
marking.
This product include the lead in high melting temperaturetype solders.
However,it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct．2011
1