RD06HHF1 Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – Silicon MOSFET Power Transistor 30MHz,6W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD06HHF1
Silicon MOSFET Power Transistor 30MHz,6W
DESCRIPTION
RD06HHF1 is a MOS FET type transistor specifically
designed for HF RF power amplifiers applications.
FEATURES
•High power gain:
Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
OUTLINE DRAWING
9.1+/-0.7
3.6+/-0.2
2
1.3+/-0.4
APPLICATION
For output stage of high power amplifiers in
HF band mobile radio sets.
1.2+/-0.4
123
0.8+0.10/-0.15
2.5 2.5
5deg
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to source voltage Vgs=0V
VGSS
Gate to source voltage Vds=0V
Pch
Channel dissipation
Tc=25°C
Pin
Input power
ID
Drain current
Zg=Zl=50Ω
-
Tch
Channel temperature
-
Tstg
Storage temperature
-
Rth j-c Thermal resistance
junction to case
Note 1: Above parameters are guaranteed independently.
9.5MAX
RATINGS UNIT
50
V
+/- 20
V
27.8
W
0.3
W
3
A
150
°C
-40 to +150 °C
4.5
°C/W
0.5+0.10/-0.15
PIN
1.Gate
2.Source
3.Drain
UNIT:mm
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
VTH
Pout
ηD
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
Load VSWR tolerance
VDS=17V, VGS=0V
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
VDD=12.5V, Pin=0.15W,
f=30MHz, Idq=0.5A
VDD=15.2V,Po=6W(Pin Control)
f=30MHz,Idq=0.5A,Zg=50Ω
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
LIMITS
MIN TYP MAX.
-
-
10
-
-
1
1.9
-
4.9
6
10
-
55 65
-
No destroy
UNIT
uA
uA
V
W
%
-
RD06HHF1
MITSUBISHI ELECTRIC
1/7
REV.5 2 APRIL. 2004