RD05MMP1_11 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W

< Silicon RF Power MOS FET (Discrete) >
RD05MMP1
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
DESCRIPTION
RD05MMP1 is a MOS FET type transistor
specifically designed for UHF RF power
amplifiers applications.
OUTLINE DRAWING
8.0+/-0.2
(d)
(b)
0.2+/-0.05
7.0+/-0.2
(a)
(b)
FEATURES
•High power gain:
Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz
•High Efficiency: 43%min. (941MHz)
•No gate protection diode
INDEX MARK
[Gate]
APPLICATION
For output stage of high power amplifiers in
941MHz band mobile radio sets.
(4.5)
0.95+/-0.2
2.6+/-0.2
TOP VIEW SIDE VIEW
DETAIL A
SIDE VIEW
DETAIL A
(c)
BOTTOM VIEW
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
UNIT:mm
NOTES:
1. ( ) Typical value
RoHS COMPLIANT
RD05MMP1 is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting
temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS Drain to source voltage
Vgs=0V
VGSS Gate to source voltage
Vds=0V
Pch
Channel dissipation
Tc=25°C
Pin
Input Power
Zg=Zl=50
ID
Drain Current
-
Tch
Junction Temperature
-
Tstg
Storage temperature
-
Rth j-c Thermal resistance
Junction to case
Note: Above parameters are guaranteed independently.
RATINGS
40
-5 to +10
73
1.4
3
150
-40 to +125
1.7
UNIT
V
V
W
W
A
°C
°C
°C/W
Publication Date : Oct．2011
1