RD04HMS2 Datasheet, PDF (1/20 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RD04HMS2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W
DESCRIPTION
RD04HMS2 is MOS FET type transistor specifically
designed for VHF/UHF/890-950MHz RF power
amplifiers applications.
OUTLINE DRAWING
6.0+/-0.15
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
FEATURES
2
1. High Power gain and High Efficiency
Pout=5.0Wtyp., Gp=14dBtyp.
Drain Effi.=53%typ.
@Vds=12.5V, Pin=0.2W, f=950MHz
2. Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in VHF/
UHF/890-950MHz band mobile radio sets.
RoHS COMPLIANT
INDEX MARK
(Gate)
3
(0.25)
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RD04HMS2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders (i.e. tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS RATINGS UNIT
VDSS Drain to Source Voltage Vgs=0V
40
V
VGSS Gate to Source Voltage Vds=0V
-5/+10
V
Pch Channel Dissipation
Tc=25°C
50
W
Pin Input Power
ID Drain Current
Zg=Zl=50
-
0.7
W
3
A
Tch Junction Temperature
-
150
°C
Tstg Storage Temperature
-
-40 to +125 °C
Rth j-c Thermal Resistance Junction to Case
Note: Above parameters are guaranteed independently.
2.5
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
UNIT
MIN TYP MAX.
IDSS Zero Gate Voltage Drain Current VDS=37V, VGS=0V
-
-
5 μA
IGSS Gate to Source Leak Current VGS=10V, VDS=0V
-
- 2.5 μA
VTH Gate Threshold Voltage
VDS=12V, IDS=1mA
1.6 - 2.6
V
Pout1 Output power
f=950MHz*,VDS=12.5V,
- 5.0 -
W
D1 Drain Efficiency
Pin=0.2W, Idq=0.1A
- 58 -
%
Pout2 Output Power
f=175MHz**,VDS=12.5V,
- 5.5 -
W
D2 Drain Efficiency
Pin=0.2W, Idq=0.1A
- 73 -
%
VDS=15.2V, Po=4W(Pin:Control)
VSWRT Load VSWR Tolerance
f=135MHz, Idq=0.1A, Zg=50
Zl=All phase
20:1 -
- VSWR
Note: Above parameters, ratings, limits and conditions are subject to change.
* In Mitsubishi 890-950MHz Evaluation Board ** In Mitsubishi VHF Evaluation Board
RD04HMS2
1/20
7 Feb 2011