RD01MUS2_11 Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

< Silicon RF Power MOS FET (Discrete) >
RD01MUS2
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
DESCRIPTION
RD01MUS2 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
This device has an internal monolithic zener diode from
gate to source for ESD protection.
FEATURES
•High power gain:
Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
•High Efficiency: 65%typ.
•Integrated gate protection diode
OUTLINE DRAWING
TYPE NAME
4.4+/-0.1
1.6+/-0.1
0.1
φ
1
2
3
1.5+/-0.1
LOT No.
1.5+/-0.1 1.5+/-0.1
0.4 ^+0.03
-0.05
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
RoHS COMPLIANT
UNIT : mm
RD01MUS2-101,T113 is a RoHS compliant products.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS RATINGS UNIT
D
VDSS Drain to source voltage Vgs=0V
30
V
VGSS Gate to source voltage Vds=0V
-5/+10
V
Pch
Channel dissipation
Tc=25°C
3.6
W
Pin
Input Power
Zg=Zl=50
100
mW
G
ID
Drain Current
-
600
mA
Tch
Channel Temperature
-
150
°C
Tstg
Storage temperature
Rth j-c Thermal resistance
-
-40 to +125 °C
Junction to case 34.5 °C/W
S
SCHEMATIC DRAWING
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
Vth
Pout
d
Zero gate voltage drain current VDS=17V, VGS=0V
Gate to source leak current VGS=10V, VDS=0V
Gate threshold Voltage
VDS=12V, IDS=1mA
Output power
VDD=7.2V, Pin=30mW
Drain efficiency
f=520MHz,Idq=100mA
LIMITS
MIN TYP MAX
-
-
50
-
-
1
1.3 1.8 2.3
0.8 1.4
-
50
65
-
Note: Above parameters, ratings, limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
Publication Date : Oct．2011
1