RD01MUS2B Datasheet, PDF (1/15 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W

< Silicon RF Power MOS FET (Discrete) >
RD01MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W
DESCRIPTION
RD01MUS2B is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
This device has an internal monolithic zener diode from
gate to source for ESD protection.
OUTLINE DRAWING
TYPE NAME
4.4+/-0.1
1.6+/-0.1
0.1
φ
1.5+/-0.1
LOT No.
FEATURES
•High power gain and High Efficiency.
Pout 1.6W Typ, Gp 15dBTyp, 70%Typ
@Vdd=7.2V,f=527MHz
•Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
1
2
3
1.5+/-0.1 1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
0.4
+0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RoHS COMPLIANCE
RD01MUS2B-101,T113 is a RoHS compliant products.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V
25
V
VGSS Gate to source voltage Vds=0V
-5/+10
V
Pch
Channel dissipation
Tc=25°C
3.6
W
Pin
Input Power
ID
Drain Current
Zg=Zl=50
-
100
mW
600
mA
Tch
Channel Temperature
-
150
°C
Tstg
Storage temperature
-
-40 to +125 °C
Rth j-c Thermal resistance
Junction to case
Note: Above parameters are guaranteed independently.
34.5
°C/W
D
G
S
SCHEMATIC DRAWING
Publication Date : Nov．2011
1