RD01MUS1_11 Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

< Silicon RF Power MOS FET (Discrete) >
RD01MUS1
RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
DESCRIPTION
RD01MUS1 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
FEATURES
High power gain:
Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
High Efficiency: 65%typ.
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
OUTLINE DRAWING
TYPE NAME
4.4+/-0.1
1.6+/-0.1
0.1
φ
1.5+/-0.1
LOT No.
1
2
3
1.5+/-0.1 1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
0.4 ^+0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RoHS COMPLIANT
RD01MUS1-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
However, It is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
RATINGS
VDSS Drain to source voltage
Vgs=0V
30
VGSS Gate to source voltage
Vds=0V
+/-10
Pch
Channel dissipation
Tc=25°C
3.6
Pin
Input Power
Zg=Zl=50
100
ID
Drain Current
-
600
Tch
Channel Temperature
-
150
Tstg
Storage temperature
-
-40 to +125
Rth j-c Thermal resistance
Junction to case
34.5
Note: Above parameters are guaranteed independently.
UNIT
V
V
W
mW
mA
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX
IDSS Zero gate voltage drain current VDS=17V, VGS=0V
-
-
50
IGSS
Vth
Pout
D
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
VDD=7.2V, Pin=30mW
f=520MHz,Idq=100mA
-
-
1
1.3 1.8 2.3
0.8 1.4
-
50
65
-
Note: Above parameters, ratings, limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
Publication Date : Oct．2011
1