RD00HVS1_11 Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W

< Silicon RF Power MOS FET (Discrete) >
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
DESCRIPTION
RD00HVS1 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
FEATURES
High power gain
Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz
OUTLINE DRAWING
TYPE NAME
4.4+/-0.1
1.6+/-0.1
0.1
φ
1.5+/-0.1
LOT No.
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
RoHS COMPLIANT
123
1.5+/-0.1 1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
0.4 ^+0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RD00HVS1-101,T113 is a RoHS compliant products.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25 deg.C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
RATINGS
VDSS Drain to source voltage
Vgs=0V
30
VGSS Gate to source voltage
Vds=0V
+/-10
Pch
Channel dissipation
Tc=25°C
3.1
Pin
Input Power
Zg=Zl=50
20
ID
Drain Current
-
200
Tch
Channel Temperature
-
150
Tstg
Storage temperature
-
-40 to +125
Rth j-c Thermal resistance
Junction to case
40
Note: Above parameters are guaranteed independently.
UNIT
V
V
W
mW
mA
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25deg.C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V
-
-
25
IGSS Gate to source leak current VGS=10V, VDS=0V
-
-
1
Vth Gate threshold Voltage
VDS=12V, IDS=1mA
1
2
3
Pout Output power
D Drain efficiency
VDD=12.5V, Pin=5mW,
f=175MHz,Idq=50mA
0.5 0.8
-
50
60
-
Note: Above parameters, ratings, limits and conditions are subject to change.
UNIT
uA
uA
V
W
%
Publication Date : Oct．2011
1