RD00HHS1_11 Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W

< Silicon RF Power MOS FET (Discrete) >
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
DESCRIPTION
RD00HHS1 is a MOS FET type transistor specifically
designed for HF RF amplifiers applications.
FEATURES
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in HF Band
mobile radio sets.
OUTLINE DRAWING
TYPE NAME
4.4+/-0.1
1.6+/-0.1
0.1
1.5+/-0.1
LOT No.
123
1.5+/-0.1 1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
0.4
+0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RoHS COMPLIANT
RD00HHS1-101,T113 is a RoHS compliant products.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
RATINGS
VDSS
Drain to source voltage
Vgs=0V
30
VGSS Gate to source voltage
Vds=0V
10
Pch
Channel dissipation
Tc=25°C
3.1
Pin
Input power
Zg=Zl=50
10
ID
Drain current
-
200
Tch
Channel Temperature
-
150
Tstg
Storage temperature
-
-40 to +125
Rth j-c Thermal resistance
Junction to case
40
Note 1: Above parameters are guaranteed independently.
UNIT
V
V
W
mW
mA
°C
°C
°C/W
Publication Date : Oct．2011
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