RD00HHS1 Datasheet, PDF (1/6 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
DESCRIPTION
RD00HHS1 is a MOS FET type transistor specifically
designed for HF RF amplifiers applications.
FEATURES
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in HF Band
mobile radio sets.
OUTLINE DRAWING
TYPE NAME
4.4+/-0.1
1.6+/-0.1
0.1
1.5+/-0.1
LOT No.
1
2
3
1.5+/-0.1 1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
0.4
+0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RoHS COMPLIANT
RD00HHS1-101,T113
is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS RATINGS UNIT
VDSS
Drain to source voltage Vgs=0V
30
V
VGSS
Gate to source voltage Vds=0V
±10
V
Pch
Channel dissipation
Tc=25°C
3.1
W
Pin
Input power
Zg=Zl=50Ω
10
mW
ID
Drain current
-
200
mA
Tch
Channel Temperature
-
150
°C
Tstg
Storage temperature
-
-40 to +125 °C
Rth j-c Thermal resistance
Junction to case
40
°C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
Vth
Pout
ηD
Zero gate voltage drain current VDS=17V, VGS=0V
Gate to source leak current VGS=10V, VDS=0V
Gate threshold Voltage
VDS=12V, IDS=1mA
Output power
VDD=12.5V, Pin=4mW,
Drain efficiency
f=30MHz,Idq=50mA
Note : Above parameters , ratings , limits and conditions are subject to change.
LIMITS
MIN TYP MAX.
-
-
25
-
-
1
1
2
3
0.3 0.7
-
55
65
-
UNIT
uA
uA
V
W
%
RD00HHS1
MITSUBISHI ELECTRIC
1/6
10 Jan 2006