RA60H1317M1A_11 Datasheet, PDF (1/10 Pages) Mitsubishi Electric Semiconductor – 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO

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RA60H1317M1A
RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA60H1317M1A is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 136- to
174-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power
and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output
power becomes available at 4.5V (typical) and 5V (maximum).
At V_GG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the
output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I_DD0 @ V_DD=12.5V, V_GG=0V)
• P_out>60W, _T>45% @ V_DD=12.5V, V_GG=5V, P_in=50mW
• Broadband Frequency Range: 136-174MHz
• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V
• Module Size: 67 x 19.4 x 9.9 mm
RoHS COMPLIANCE
• RA60H1317M1A-201 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot
Marking.
• This product include the lead in the Glass of electronic parts
and the lead in electronic Ceramic parts.
However ,it is applicable to the following exceptions of RoHS
Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
BLOCK DIAGRAM
2
3
1
4
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (FIN)
PACKAGE CODE: H2M
ORDERING INFORMATION:
ORDER NUMBER
RA60H1317M1A-201
SUPPLY FORM
Antistatic tray,
10 modules/tray
Publication Date :Apr.2011
1