RA60H1317M1A_08 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – RF MOSFET MODULE 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA60H1317M1A
RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA60H1317M1A is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 136- to
174-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases. With a gate
voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At V_GG=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I_DD≅0 @ V_DD=12.5V, V_GG=0V)
• P_out>60W, η_T>45% @ V_DD=12.5V, V_GG=5V, P_in=50mW
• Broadband Frequency Range: 136-174MHz
• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V
• Module Size: 67 x 18 x 9.9 mm
BLOCK DIAGRAM
2
3
1
4
5
1 RF Input (P_in)
2 Gate Voltage (V_GG), Power Control
3 Drain Voltage (V_DD), Battery
4 RF Output (P_out)
5 RF Ground (FIN)
PACKAGE CODE: H2M
RoHS COMPLIANCE
• RA60H1317M1A is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA60H1317M1A-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA60H1317M1A
MITSUBISHI ELECTRIC
1/9
13 Mar 2008