RA45H8994M1 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA45H8994M1
RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA45H8994M1 is a 45-watt RF MOSFET Amplifier
BLOCK DIAGRAM
Module for 12.8-volt mobile radios that operate in the 896- to
2
3
941-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage 1 and the gate voltage 2(V_GG1=V_GG2=0V), only a small
leakage current flows into the drain and the nominal output
signal (P_out=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is
supplied to the gate voltage 1, the output power and the drain
current increase as the gate voltage 2 increases. The output
1
4
power and the drain current increase substantially with the gate
voltage 2 around 0V (minimum) under the condition when the
gate voltage 1 is kept in 3.4V. The nominal output power
becomes available at the state that V_GG2 is 4V (typical) and 5V
5
(maximum). At this point, V_GG1 has to be kept in 3.4V.
At V_GG1=3.4V & V_GG2=5V, the typical gate currents are 0.4mA.



This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltages and controlling the output power
1 RF Input added Gate Voltage 1(P_in&V_GG1)
with the input power.
2 Gate Voltage 2(V_GG2), Power Control
3 Drain Voltage (V_DD), Battery
FEATURES
4 RF Output (P_out)
• Enhancement-Mode MOSFET Transistors
(I_DD≅0 @ V_DD=12.8V, V_GG1=V_GG2=0V)
• P_out>45W, η_T>33% @V_DD=12.8V, V_GG1=3.4V, V_GG2=5V, P_in=50mW
5 RF Ground (Case)
PACKAGE CODE: H2M
• Broadband Frequency Range: 896-941MHz
• Metal cap structure that makes the improvements of RF
radiation simple
• Low-Power Control Current I_GG1+I_GG2=0.4mA(typ) @ V_GG1=3.4V, V_GG2=5V
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
RoHS COMPLIANCE
• RA45H8994M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA45H8994M1-101
RA45H8994M1
SUPPLY FORM
Antistatic tray,
10 modules/tray
MITSUBISHI ELECTRIC
1/9

20^th Dec 2006