RA33H1516M1 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO

Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
RA33H1516M1 ^{OBSERVE HANDLING PRECAUTIONS}
RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA33H1516M1 is a 33watt RF MOSFET Amplifier
Module for 12.5volt mobile radios that operate in the 154- to
162MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases. With a gate
voltage around 3.0V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4V (typical) and 5V (maximum). At V_GG=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I_DD≅0 @ V_DD=12.5V, V_GG=0V)
• P_out>33W, η_T>50% @ V_DD=12.5V, V_GG=5V, P_in=10mW
• Broadband Frequency Range: 154-162MHz
• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V
• Module Size: 46 x 14.4 x 6.3 mm
BLOCK DIAGRAM
2
3
1
4
5
1 RF Input (P_in)
2 Gate Voltage (V_GG), Power Control
3 Drain Voltage (V_DD), Battery
4 RF Output (P_out)
5 RF Ground (Case)
PACKAGE CODE: H57
RoHS COMPLIANCE
• RA33H1516M1-201 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever
,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA33H1516M1-201
SUPPLY FORM
Antistatic tray,
20 modules/tray
RA33H1516M1
1/9
25 Jun 2010