RA30H1317M1_11 Datasheet, PDF (1/10 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO

< Silicon RF Power Modules >
RA30H1317M1
RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for
BLOCK DIAGRAM
12.5-volt mobile radios that operate in the 135- to 175-MHz range.
The battery can be connected directly to the drain of the
2
3
enhancement-mode MOSFET transistors.
The output power and drain current increase as the gate voltage
increases. With a gate voltage around 3.5V (minimum), output
power and drain current increases substantially.
1
4
The nominal output power becomes available at 4V (typical) and 5V
(maximum). At V_GG=5V, the typical gate current is 1 mA.
5
This module is designed for non-linear FM modulation.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I_DD0 @ V_DD=12.5V, V_GG=0V)
• P_out>30W, _T>40% @ V_DD=12.5V, V_GG=5V, P_in=50mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V
• Module Size: 67 x 19.4 x 9.9 mm
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H2M
RoHS COMPLIANCE
• RA30H1317M1-201 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA30H1317M1-201
SUPPLY FORM
Antistatic tray,
10 modules/tray
Publication Date : Oct．2011
1