RA30H0608M Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – 68-88MHz 30W 12.5V MOBILE RADIO

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA30H0608M
68-88MHz 30W 12.5V MOBILE RADIO
DESCRIPTION
The RA30H0608M is a 30-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 68- to
BLOCK DIAGRAM
2
3
88-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V_GG=0V), only a small leakage current flows into the
1
4
drain and the RF input signal attenuates up to 60 dB. The output
5
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
V_GG=5V, the typical gate current is 1 mA.
TENTATIVE ^{This module is designed for non-linear FM modulation, but may}
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
FEATURES
• Enhancement-Mode MOSFET Transistors
4 RF Output (Pout)
(I_DD≅0 @ V_DD=12.5V, V_GG=0V)
5 RF Ground (Case)
• P_out>30W, η_T>40% @ V_DD=12.5V, V_GG=5V, P_in=50mW
• Broadband Frequency Range: 68-88MHz
• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
ORDERING INFORMATION:
ORDER NUMBER
RA30H0608M-E01
RA30H0608M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA30H0608M
MITSUBISHI ELECTRIC
1/9
7 April 2003