RA13H3340M Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – 330-400MHz 13W 12.5V MOBILE RADIO

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA13H3340M
330-400MHz 13W 12.5V MOBILE RADIO
DESCRIPTION
The RA13H3340M is a 13-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 330- to 400-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V_GG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At V_GG=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I_DD≅0 @ V_DD=12.5V, V_GG=0V)
• P_out>13W, η_T>40% @ V_DD=12.5V, V_GG=5V, P_in=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
BLOCK DIAGRAM
2
3
1
4
5
1 RF Input (P_in)
2 Gate Voltage (V_GG), Power Control
3 Drain Voltage (V_DD), Battery
4 RF Output (P_out)
5 RF Ground (Case)
ORDERING INFORMATION:
ORDER NUMBER
RA13H3340M-E01
RA13H3340M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA 13H3340M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002