RA08N1317M Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – 135-175MHz 8W 9.6V PORTABLE RADIO

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA08N1317M
135-175MHz 8W 9.6V PORTABLE RADIO
DESCRIPTION
The RA08N1317M is a 8-watt RF MOSFET Amplifier Module
for 9.6-volt portable radios that operate in the 135- to 175-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V_GG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
V_GG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I_DD≅0 @ V_DD=9.6V, V_GG=0V)
• P_out>8W @ V_DD=9.6V, V_GG=3.5V, P_in=20mW
• η_T>50% @ P_out=8W (V_GG control), V_DD=9.6V, P_in=20mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current I_GG=1mA (typ) at V_GG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
BLOCK DIAGRAM
2
3
1
4
5
1 RF Input (P_in)
2 Gate Voltage (V_GG), Power Control
3 Drain Voltage (V_DD), Battery
4 RF Output (P_out)
5 RF Ground (Case)
ORDERING INFORMATION:
ORDER NUMBER
RA08N1317M-E01
RA08N1317M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA 08N1317M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002