RA05H8693M_10 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – 866-928MHz 5W 14V, 3 Stage Amp.

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Silicon RF Power Semiconductors
RA05H8693M
RoHS Compliance,866-928MHz 5W 14V, 3 Stage Amp.
DESCRIPTION
The RA05H8693M is a 5watt RF MOSFET Amplifier Module
that operate in the 866 to 928MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases.
With a gate voltage around 3.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3.8V (typical) and 4V (maximum).
At V_GG=5V, the typical gate current is 1 mA.
BLOCK DIAGRAM
2
1
3
4
5
FEATURES
• Enhancement-Mode MOSFET Transistors
(I_DD≅0 @ V_DD=14V, V_GG=0V)
• P_out>5W, I_T<1.4A @ V_DD=14V, V_GG=5V, P_in=1mW
• I_T<1.4A @ V_DD=14V, P_out=3W(V_GG control), P_in=1mW
• Broadband Frequency Range: 866-928MHz
• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V
• Module Size: 60.5 x 14 x 6.4 mm
1 RF Input (P_in)
2 Gate Voltage (V_GG), Power Control
3 Drain Voltage (V_DD), Battery
4 RF Output (P_out)
5 RF Ground (Case)
RoHS COMPLIANCE
• RA05H8693M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever
,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
PACKAGE CODE: H11S
ORDERING INFORMATION:
ORDER NUMBER
RA05H8693M-101
SUPPLY FORM
Antistatic tray,
20 modules/tray
RA05H8693M
1/9
22 Jun 2010