RA01L8693MA_10 Datasheet, PDF (1/12 Pages) Mitsubishi Electric Semiconductor – 865-928MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER

Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
RA01L8693MA ^{OBSERVE HANDLING PRECAUTIONS}
RoHS Compliance , 865-928MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER
DESCRIPTION
The RA01L8693MA is a 1.4-watt RF MOSFET Amplifier Module.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors.
The output power and drain current increase as the gate voltage
increases. With a gate voltage around 0.5V (minimum), output
power and drain current increases substantially. The nominal
output power becomes available at 1.5V (typical) and 2.0V
(maximum). At V_GG=2.0V, the typical gate current is 1mA.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I_DD0 @ V_DD=3.3V, V_GG=0V)
• P_out>1.4W, η_T>38% @ V_DD=3.3V, V_GG=2.0V, P_in=30mW
• Broadband Frequency Range: 865-928MHz
• Low-Power Control Current I_GG=1mA (typ) at V_GG=2.0V
• Module Size: 9.1 x 9.2 x 1.8 mm
BLOCK DIAGRAM
2
3
1
4
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground
PACKAGE CODE: H58
RoHS COMPLIANCE
• RA01L8693MA -101 is a RoHS compliance products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA01L8693MA -101
SUPPLY FORM
Antistatic tray,
168 modules/tray
RA01L8693MA
1/12
22 Jun 2010