QM30TB-2HB Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

QM30TB-2HB
MITSUBISHI TRANSISTOR MODULES
QM30TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
• IC Collector current .......................... 30A
• VCEX Collector-emitter voltage ......... 1000V
• hFE DC current gain............................. 750
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
127
7.5 21 7.5 21 7.5 16.5
19 28.5 28.5 21.5
BuP EuP BvP EvP BwP EwP
P
2–φ5.5
U
V
W
N
BuN EuN BvN EvN BwN EwN
98
110
Tab#110, t=0.5 Tab#250, t=0.8
LABEL
P
BuP
EuP
U
BuN
EuN
N
BvP
EvP
V
BvN
EvN
BwP
EwP
W
BwN
EwN
Note: All Transistor Units are 4-Stage Darlingtons.
Feb.1999