PS21A79 Datasheet, PDF (1/10 Pages) Mitsubishi Electric Semiconductor – Dual-In-Line Package Intelligent Power Module

PS21A79
MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module>
PS21A79
TRANSFER-MOLD TYPE
INSULATED TYPE
MAIN FUNCTION AND RATINGS
z 3 phase inverter with N-side open emitter structure
z 600V / 50A (CSTBT)
APPLICATION
z AC100 ~ 200Vrms class, motor control
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
● For P-side : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection
● For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC),
● Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply)
● Temperature monitoring : Analog output of LVIC temperature
● Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active)
● UL Approved : File No. E80276
MAXIMUM RATINGS (T_j = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
V_CC
Supply voltage
Applied between P-NU,NV,NW
V_CC(surge)
V_CES
Supply voltage (surge)
Collector-emitter voltage
Applied between P-NU,NV,NW
±I_C
Each IGBT collector current
T_C= 25°C
±I_CP
Each IGBT collector current (peak) T_C= 25°C, less than 1ms
P_C
Collector dissipation
T_C= 25°C, per 1 chip
T_j
Junction temperature
CONTROL (PROTECTION) PART
Ratings
Unit
450
V
500
V
600
V
50
A
100
A
142
W
-20~+150
°C
Symbol
V_D
V_DB
V_IN
V_FO
I_FO
V_SC
Parameter
Control supply voltage
Control supply voltage
Input voltage
Fault output supply voltage
Fault output current
Current sensing input voltage
Condition
Applied between V_P1-V_PC, V_N1-V_NC
Applied between V_UFB-V_UFS, V_VFB-V_VFS, V_WFB-V_WFS
Applied between U_P, V_P, W_P-V_PC, U_N, V_N, W_N-V_NC
Applied between F_O-V_NC
Sink current at F_O terminal
Applied between CIN-V_NC
Ratings
Unit
20
V
20
V
-0.5~V_D+0.5
V
-0.5~V_D+0.5
V
1
mA
-0.5~V_D+0.5
V
TOTAL SYSTEM
Symbol
Parameter
Condition
Ratings
Unit
V_CC(PROT)
Self protection supply voltage limit
(Short circuit protection capability)
V_D = 13.5~16.5V, Inverter Part
T_j = 125°C, non-repetitive, less than 2μs
400
V
T_C
Module case operation temperature
(Note 1)
-20~+100
°C
T_stg
Storage temperature
-40~+125
°C
V_iso
Isolation voltage
60Hz, Sinusoidal, AC 1minute, between connected all
pins and heat-sink plate
2500
V_rms
Note 1: Tc measurement point is described in Fig.1.
THERMAL RESISTANCE
Symbol
Parameter
Condition
Limits
Unit
Min. Typ. Max.
R_th(j-c)Q
Junction to case thermal
Inverter IGBT part (per 1/6 module)
-
-
0.88 °C/W
R_th(j-c)F
resistance
(Note 2)
Inverter FWDi part (per 1/6 module)
-
-
1.78 °C/W
Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface
of DIPIPM and heat-sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the
thermal conductivity of the applied grease. For reference, Rth(c-f) is about 0.2°C/W (per 1/6 module, grease thickness: 20μm, thermal
conductivity: 1.0W/m•k).
March 2011
1