PS21767-V Datasheet, PDF (1/8 Pages) Mitsubishi Electric Semiconductor – Dual-In-Line Package Intelligent Power Module

PS21767-V
MITMSUITBSIUSBHISSHEIMSIECMOINCDOUNCDTUOCRTO<RDu<aDl-uIna-lL-Iinn-eLiPnaecPkacgkeaIgneteIlnlitgeellnigtePnotwPeorwMeor dMuoled>ule>
PS21P7S62717-6V7-V
TRATNRSAFNESRF-EMRO-MLDOLTDYPTEYPE
INSIUNLSAUTLEADTETDYPTEYPE
INTEGRATED POWER FUNCTIONS
600V/30A low-loss CSTBT^TM inverter bridge with N-side
three-phase output DC-to-AC power conversion
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
• For upper-leg IGBTS : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection.
• For lower-leg IGBTS : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC).
• Fault signaling : Corresponding to an SC fault (Lower-leg IGBT) or a UV fault (Lower-side supply).
• Input interface : 3, 5V line (High Active)
• UL Approved : Yellow Card No. E80276
APPLICATION
AC100V~200V three-phase inverter drive for small power motor control.
Fig. 1 PACKAGE OUTLINES
Dimensions in mm
(11×1.78)
1.78 ±0.2
A = 1.78 ±0.2
B = 4.32 ±0.2
2.04 ±0.3
B _{AB AB AB A} B _A
D
28 27 26 25 24 23 22 21 2019 181716 151413 121110 9 ₈ 7 6 ₅ 4
29
30
Ty p e n a m e , L o t N o.
3 ₂ 1 _{5-φ2.2(DEPTH2.6)}
2-^φ3.3
5.6 F
2
(2.2)
(1.7)
QR
C
C
CODE
31 ^{32 33}
34
35
36
37
38
6.6 ±0.3 7.62 ±0.3 7.62 ±0.3 7.62 ±0.3 7.62 ±0.3
3.3 ±0.3
3.3 ±0.3
46 ±0.2
3.95 ±0.3
52.5
3.25
0.5
1.5
E
1
2
(φ3.5)
φ3.3
(1)
1.55
3.1 ±0.1
(2.9)
(1.6)
HEAT SINK SIDE
(0.6)
(1)
(φ3.7)
C-C
Note: All outer lead terminals are with lead free solder (Sn-Cu) plating.
(0.75)
DETAIL D
DETAIL E
(2.2)
(1.7)
TERMINAL CODE
1 VUFS
2 (UPG)
3 VUFB
4 VP1
5 (COM)
6 UP
7 VVFS
8 (VPG)
9 VVFB
10 VP1
11 (COM)
12 VP
13 VWFS
14 (WPG)
15 VWFB
16 VP1
17 (COM)
18 WP
19 (UNG)
20 VNO
21 UN
22 VN
23 WN
24 FO
25 CFO
26 CIN
27 VNC
28 VN1
29 (WNG)
30 (VNG)
31 NW
32 NV
33 NU
34 W
35 V
36 U
37 P
38 NC
Aug. 2007
1